Effect of various interfacial SiO2 layer on the properties of wafer direct bonding
碩士 === 國立清華大學 === 材料科學工程學系 === 97 === The technology of wafer direct bonding has been employed in present study to bond several types of silicon bonded wafer pairs with various interfacial SiO2 layers, such as: a silicon wafer with a surface native oxide layer bonded to another silicon wafer with...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30069515584580804129 |