Passivation of In0.2Ga0.8As/GaAs with MBE Al2O3 - Electrical, Chemical and Microstructural Characteristics
碩士 === 國立清華大學 === 材料科學工程學系 === 97 === Molecular beam epitaxy (MBE) grown high κ dielectric Al2O3 film on In0.2Ga0.8As/ GaAs substrate, has been demonstrated an effective passivation for InGaAs surface. Utilizing the high-temperature and room-temperature growth methods for the oxide deposition, both...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94836746033132718459 |