High quality nano thick Gd2O3 and Y2O3 films on GaN
碩士 === 國立清華大學 === 材料科學工程學系 === 97 === High-quality nano-thick Gd2O3 and Y2O3 epitaxial films have been grown on GaN(0001)h substrate by molecular beam epitaxy (MBE). The epi-layer of R2O3 (where R denotes Gd and Y) still exhibit remarkably uniform thickness and highly structural perfection despite...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81726905344217756014 |