The Design and Fabrication of High Power Density 4H-SiC RF MOSFETs
碩士 === 國立清華大學 === 電子工程研究所 === 97 === In this thesis, we focus on the design and process of 4H-SiC RF MOSFETs on a semi-insulating substrate, including e-beam lithography for submicron gate length, low sheet resistance source/drain implantation and activation, and non-annealed ohmic contact. The obse...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03432878481508063959 |