The Investigation of Metal-Gate/High-k CMOSFETs、Metal-Insulator-Metal Capacitor and MONOS Non-Volatile Memory Applying High-k Dielectric Materials

博士 === 國立清華大學 === 電子工程研究所 === 97 === According to International Technology Roadmap for Semiconductor (ITRS), logic and memory devices are being continuously scaled down to reduce the area of the chip and the cost. However, traditional dielectric material SiO2 will face the physical limitation of nan...

Full description

Bibliographic Details
Main Authors: Lin, Shih-Hao, 林士豪
Other Authors: Yeh, Fon-Shan
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/67231215372915219498