Numerical Simulation of Optoelectronic Properties of Nonpolar and Semipolar InGaN/GaN Quantum Well Light Emitting Diodes

碩士 === 國立臺灣大學 === 光電工程學研究所 === 97 === This thesis discusses the optical characteristics of a nonpolar and semipolar InGaN/GaN quantum well with different indium compositions, quantum well widths, and injection carrier densities. Also, we have studied the properties of valence band structure of the s...

Full description

Bibliographic Details
Main Authors: Hung-Hsun Huang, 黃泓勛
Other Authors: Yuh-Renn Wu
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/56644633843292408305