Epitaxial technology for the monolithic integration of HBT and PHEMT
碩士 === 國立臺灣大學 === 電子工程學研究所 === 97 === We have investigated the optimal growth conditions for integrating heterojunction bipolar transistors (HBTs) and pseudomorphic high electron mobility transistors (PHEMTs) together by metal-organic chemical vapor depositon (MOCVD). In the structure of HBT and PHE...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98107253636103144981 |