Analysis of Nonuniformity Characterization for MOS Structure Device with High-k HfO2 Dielectric Laye
碩士 === 國立臺灣大學 === 電子工程學研究所 === 97 === The EOTs are always derived from two frequency method of capacitance measurement with four parameters. However, the EOT is just the effective value excluding any message about nonuniformity characterization of devices. In this work, the characteristic of nonunif...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43530131268940766793 |