Compensation Technique of Ultra-Thin Oxide in D.I. Water and the Effect of Hydrogen on the Reliability of Oxide-Nitride-Oxide (ONO) Dielectrics
博士 === 國立臺灣大學 === 電子工程學研究所 === 97 === In this work, a method named scanning-frequency anodization (SF-ANO) was proposed to improve the quality of ultra-thin thermally grown SiO2. The frequency condition of SF is from 20Hz to 200kHz. After SF-ANO treatment, the gate leakage current of 18Å SiO2 is 1.5...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78969770375360162180 |