Optical and electrical properties of InAsPSb bulk epilayers grown on GaAs substrates
碩士 === 國立臺灣大學 === 電子工程學研究所 === 97 === We report a systematic investigation on the photoluminescence (PL) of quaternary InAsPSb grown on GaAs substrates by gas-source molecular beam epitaxy (GSMBE). When the As composition < 0.65, samples show a Gaussian-like PL band, which can be illustrated by a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89562423206625783292 |