| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === The hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by radio-frequency plasma enhanced chemical vapor deposition in this thesis. The a-Si:H thin films were prepared under different experimental parameters, such as hydrogen dilution ratio, substrate temperature, working pressure and electrode gap. The microstructure factor and B value (gained from the slope of Tauc formula) of a-Si:H were acquired respectively by using Fourier transform infrared spectrometer and ultraviolet-visible spectrophotometer. We tried to explain the photoelectrical properties of a-Si:H by micorstructure and B value. It was revealed that photoelectric characteristics were indeed influenced by microstructure and B value. Finally, by altering the deposition condition, the best operating condition which author found possessing a lower microstructure value of 0.08 and a higher B value of 1100, what is more, a photosensitivity can be achieved as high as 2.63×10^5.
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