Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System
碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === The hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by radio-frequency plasma enhanced chemical vapor deposition in this thesis. The a-Si:H thin films were prepared under different experimental parameters, such as hydrogen dilution ratio, subst...
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ndltd-TW-097NTUS50630732016-05-02T04:11:47Z http://ndltd.ncl.edu.tw/handle/73105283949941113364 Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System 以射頻矽甲烷電漿化學氣相沉積系統製備氫化非晶矽膜之研究 Chieh Li 李杰 碩士 國立臺灣科技大學 化學工程系 97 The hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by radio-frequency plasma enhanced chemical vapor deposition in this thesis. The a-Si:H thin films were prepared under different experimental parameters, such as hydrogen dilution ratio, substrate temperature, working pressure and electrode gap. The microstructure factor and B value (gained from the slope of Tauc formula) of a-Si:H were acquired respectively by using Fourier transform infrared spectrometer and ultraviolet-visible spectrophotometer. We tried to explain the photoelectrical properties of a-Si:H by micorstructure and B value. It was revealed that photoelectric characteristics were indeed influenced by microstructure and B value. Finally, by altering the deposition condition, the best operating condition which author found possessing a lower microstructure value of 0.08 and a higher B value of 1100, what is more, a photosensitivity can be achieved as high as 2.63×10^5. Lu-sheng Hong 洪儒生 2009 學位論文 ; thesis 89 zh-TW |
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碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === The hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by radio-frequency plasma enhanced chemical vapor deposition in this thesis. The a-Si:H thin films were prepared under different experimental parameters, such as hydrogen dilution ratio, substrate temperature, working pressure and electrode gap. The microstructure factor and B value (gained from the slope of Tauc formula) of a-Si:H were acquired respectively by using Fourier transform infrared spectrometer and ultraviolet-visible spectrophotometer. We tried to explain the photoelectrical properties of a-Si:H by micorstructure and B value. It was revealed that photoelectric characteristics were indeed influenced by microstructure and B value. Finally, by altering the deposition condition, the best operating condition which author found possessing a lower microstructure value of 0.08 and a higher B value of 1100, what is more, a photosensitivity can be achieved as high as 2.63×10^5.
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Lu-sheng Hong |
author_facet |
Lu-sheng Hong Chieh Li 李杰 |
author |
Chieh Li 李杰 |
spellingShingle |
Chieh Li 李杰 Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System |
author_sort |
Chieh Li |
title |
Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System |
title_short |
Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System |
title_full |
Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System |
title_fullStr |
Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System |
title_full_unstemmed |
Hydrogenated Amorphous Silicon Films Prepared by RF SiH4-PECVD System |
title_sort |
hydrogenated amorphous silicon films prepared by rf sih4-pecvd system |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/73105283949941113364 |
work_keys_str_mv |
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