Growth and characterization of ZnO thin films prepared by reactive ion beam sputtering deposition
碩士 === 國立臺灣科技大學 === 電子工程系 === 97 === ZnO thin films have been deposited on Si(100) substrates by reactive ion beam sputtering deposition at 300 and 500牵C. The effect of growth temperature, oxygen partial flow rate and substrate bias on the properties of ZnO thin films were investigated. ZnO deposi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/54986045457924448400 |