Study of polybenzoxazole surface cracking in wafer level chip size packaging

• Main Authors: Chia-Ling Lin, 林嘉玲
• Other Authors: Ming-Chang Shih
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/p47mj3

碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 97 === In the semiconductor manufacturing process of wafer-level chip scale package (WLCSP), a thin coating of film-like material; usually a type of photo-resist material which is similarly used in lithography process, is generally applied on the surface of the package to resist moisture attacks and reduce thermal stress. In the stage of baking this resistive film, while the process temperature is too low, or lower then a critical point it takes longer time to remove the photo resist, and the resistive film is easily to be peel-off. If the process temperature is under counter, set too high then residual contain mention will occur after the process of photo-resist development, and cause wrinkles and cracks on the photo resist film. This object of this thesis is to investigate the dependence of backing condition on Polybenzoxazole (PBO) surface cracks of WLCSP products in the photo-lithography process. The oven types selected in this study a vacuum oven is selected, and three sets of backing condition are chased in this experiment. And through the measurement and observation of the variation in surface crack defects, film thickness and film uniformity of different processing condition, able to optimize the parameter of baking process for WLCSP products.