NiSi Dopant Effects by Electrical Characterization
碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 97 === Therefore, full- all-metal silicides the advantages of low resistance rate coming to replace the traditional gate polysilicon and metal silicide contacts as part of future study of the spindle to silicides of nickel as a metal silicide materials. And nickel...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90073382423333672022 |