A Study on the Hot-Carrier Reliability of 200V SOI PLDMOS
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 97 === The reliability of the high voltage P-LDMOS is examined extensively by moving the impact ionization area and varying the surface electric field in the drift region. Breakdown walkout in high-voltage P-LDMOS devices on a thin SOI layer is demonstrated closely rela...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17003352917403750503 |