Microstructures and Electrical Properties of Cr-Si Thin Films

• Main Authors: Hung-Xsien Huang, 黃泓憲
• Other Authors: 陳貞光
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/x2vc28

碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 97 === Current study investigates microstructures of hot pressed Cr-Si alloys and their sputtered thin film properties. The apparent densities of Cr-Si alloys are related to Cr/Si interdiffusion. The porosity increases with Si concentration. It has to do with the difficulty of forming higher atomic packing factor of Cr/Si intermetallic compounds by diffusing Si into Cr. The electrical resistivity of as-deposited Cr-Si thin film increases with silicon content. The electrical transport mechanism is explained by percolation theory. In as-deposited Cr-rich films, Cr atoms easily form metal channel, and annealing leads to crystallizing make resistivity descend, but precipitating chromium silicide in Si-rich films separate the Cr-atoms ascends resistivity.Temperature coefficients of resistivity (TCR) demonstrate that the Si-rich and Cr-rich films bear negative and positive TCR, respectively. While in Si-rich films, Si is found to be amorphous in films with thickness as high as 1um. Therefore, the Si-rich films demonstrates semiconductor characteristics.