Breakdown Characteristics of HfO2 Dielectrics with Cyclic D2O Annealing
碩士 === 國立臺北科技大學 === 機電整合研究所 === 97 === In order to avoid the short channel effect in MOSFETs the gate dielectrics have been thinning continuously. But this also causes problems of leakage current and reliability so using high-k materials is necessary in solving these problems. Among the high-k mater...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/huq82b |