TDDB of MOS Capacitors with HfLaO and HfZrLaO Dielectrics
碩士 === 國立臺北科技大學 === 機電整合研究所 === 97 === For the 45 nm and beyond CMOS technologies, the equivalent thickness of gate dielectrics must become thinner to avoid short channel effect. Thus using high-κ materials are unavoidable in achieving both high permittivity and enough physical thickness to reduce g...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/eb34b2 |