Effects of Al and Ge Dopings on the Electronic Structure of CoSi Studied by X-ray Absorption Spectroscopy
碩士 === 淡江大學 === 物理學系碩士班 === 97 === We report the effects of Al and Ge partial substitution for Si on the thermoelectric materials of CoSi alloys CoSi1-xAlx (0 ≤ x ≤ 0.12) and CoSi1-xGex (0 ≤ x ≤ 0.15). We have performed X-ray absorption near edge structure (XANES) study the correlations between elec...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/38421815966825851682 |