The Research Based on pH-Sensing of Ba0.7Sr0.3TiO3/SiO2 Ultra-thin Film As Well As Hafnium-based Dielectrics Prepared by Anodization for Ion Sensitive Field Effect Transistor Devices
博士 === 國立雲林科技大學 === 工程科技研究所博士班 === 97 === The ion-sensitive field-effect transistor (ISFET) was presented first by P. Bergveld since 1970, the structure is similar to that of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) from the gate metal replace by electrolyte and sensitive layer, in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33879312423327932558 |