Process Development of Low-Temperature Tunnel Oxides and Metallic Nanocrystals forNonvolatile Memory
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === In this work, we proposed the nitric acid oxidation method to prepare the memory tunneling oxide. The Si, Al, and Zr films were deposited by the sputtering system, respectively. Then, the sputtered Si, Al, Zr films were oxidized by immersing in the nitric aci...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11266739162261288535 |