| Summary: | 碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === In this work, we proposed the nitric acid oxidation method to prepare the memory tunneling oxide. The Si, Al, and Zr films were deposited by the sputtering system, respectively. Then, the sputtered Si, Al, Zr films were oxidized by immersing in the nitric acid solution (HNO3:H2O=1:10) for 60s at room temperature. First, metal-insulator-silicon (MIS) structure using the nitric-acid-oxidized dielectrics as gate oxide was fabricated to test the quality of the formed SiO2, Al2O3, and ZrO2. Then, the CoSi2 thin film was deposited as the self-assembled layer on the samples with the SiO2, Al2O3, and ZrO2 tunneling oxide. After a thermal annealing, the CoSi2 NCs aggregate and have shown obvious memory effect. Moreover, the related reliability measurements such as retention and endurance characteristics have also been extracted. In our experiments, the best memory effect of the CoSi2 NCs on the nitric acid oxidized ZrO2 memory structure shows a significant memory window of 10V under ±10V. Also, the nitric-acid-oxidized ZrO2 treated by a RTA at 400 ℃ exhibits satisfactory electrical properties of EOT=1.98nm and k=11.8. The electrical characteristics confirm the feasibility of the nitric acid oxidation for application in the memory devices. Therefore, it is concluded that nitric acid oxidation is a simple, cost-effective and low temperature process to prepare the memory tunneling oxide especially for the application of the system on panel and 3D memory stacked structure in the future.
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