Relation of the parasitic source/drain resistance for MOSFET’s to the effective electron mobility
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === Pocket implant structure of MOSFET’s improves some short-channel effects, but it also has some disadvantages such as Reverse Short Channel Effect (RSCE) and IDsat Degradation. For short channel devices, the drain current degradation is more associated to para...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93273657145691581566 |