Zinc oxide is a potential semiconductor material for transparent thin-film field-effect transistors
碩士 === 國防大學理工學院 === 電子工程碩士班 === 98 === Zinc oxide is a potential semiconductor material for transparent thin-film field-effect transistors. ZnO has a direct energy gap Eg = 3.35 eV, high carrier mobility rate, and light transmittance. In this project, we use thermal evaporation deposition method to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03065877466796666368 |