The Analytic Modeling of the Effect of the Location of Grain Boundaries on the Threshold Voltage of Polycrystalline Silicon Thin Film Transistors
碩士 === 長庚大學 === 光電工程研究所 === 98 === Polycrystalline silicon thin film transistors (poly-Si TFTs) are widely used in active matrix liquid crystal displays (AMLCDs). Grain boundaries will cause the variation of threshold voltage in poly-Si TFTs. This thesis focuses on the effect of the locations of g...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68882511698402079056 |