Study of TiO2 and Nd2O3 High-k Materials Deposited on Polycrystalline Silicon
碩士 === 長庚大學 === 電子工程學研究所 === 98 === In this study, metal induced crystallization (MIC) is used to replace the solid phase crystallization (SPC) to get a larger grain and to reduce the trap states existed in the grain boundaries to improve the electrical characteristics in polysilicon re-crystallizat...
Main Authors: | Tsun Cheng Chan, 詹圳正 |
---|---|
Other Authors: | C. H. Kao |
Format: | Others |
Published: |
2009
|
Online Access: | http://ndltd.ncl.edu.tw/handle/09601866248121861106 |
Similar Items
-
RF Sputtering Nd2O3 Stacked High-k Dielectrics on the Polycrystalline Silicon
by: Yu Cheng Liao, et al. -
RF Sputtering Nd2O3 Stacked High-k Dielectrics on the Polycrystalline Silicon
by: Yu Cheng Liao, et al.
Published: (2010) -
Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells
by: Zu-Po Yang, et al.
Published: (2016-08-01) -
Substrate Grain-Dependent Chemistry of Carburized Planar Anodic TiO2 on Polycrystalline Ti
by: Celine Rüdiger, et al.
Published: (2018-03-01) -
Substrate Grain-Dependent Chemistry of Carburized Planar Anodic TiO2 on Polycrystalline Ti
by: Celine Rüdiger, et al.
Published: (2017-02-01)