Fabrication and characterization of PIN and MWQ GaN/InGaN solar cell
博士 === 長庚大學 === 電子工程學研究所 === 98 === Recently, indium gallium nitride materials (InxGa1−xN) have been extensively investigated for application in photovoltaic devices owing to their energy bandgaps lying between 0.7 and 3.4 eV. The properties of the wide bandgap range make it useful for the fabricati...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54897723000136902809 |