Gadolinium oxide based transparent resistive random access memory study
碩士 === 長庚大學 === 電子工程學研究所 === 98 === In recent years, resistive random access memory has been widely researched, based on its low operation voltage、short write/erase time、long storage time、nondestructive readout、multi-bit storage and simple structure will be as a candidate for next generation nonvola...
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| Format: | Others |
| Online Access: | http://ndltd.ncl.edu.tw/handle/23535145210605270637 |