High-κ GdTixOy and CeO2 Trapping Layers Applied in MOHOS (Metal-Oxide-High κ-Oxide-Silicon) Memory
碩士 === 長庚大學 === 電子工程學研究所 === 98 === Recently, floating gate memory devices have be widely used in flash memory device. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional floating gate me...
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| Format: | Others |
| Online Access: | http://ndltd.ncl.edu.tw/handle/48990133039447984256 |