The Study of Gd2O3 Nanocrystal Memory by Using Post CF4 Plasma Treatment and Rapid Thermal Anneal
碩士 === 長庚大學 === 電子工程學研究所 === 98 === In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal memory structure to improve by CF4 plasma treatment with post rapid thermal anneal. First, we use sputter to deposited Gd2O3 layer, then use rapid thermal anneal to form nanocrystal. The Gd2O3 na...
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58769043906528600306 |