| Summary: | 碩士 === 長庚大學 === 電子工程學研究所 === 98 === In this thesis, we propose a Gadolinium oxide (Gd2O3) nanocrystal memory structure to improve by CF4 plasma treatment with post rapid thermal anneal. First, we use sputter to deposited Gd2O3 layer, then use rapid thermal anneal to form nanocrystal. The Gd2O3 nanocrystal memory with additional rapid thermal anneal in order to observed whether the formation of Gd2O3 nanocrystal memory, and also get better Electrical characteristics. The Gd2O3 nanocrystal memory with CF4 plasma treatment can improve the memory window, program/erase efficiency and the data retention. Finally, the electrical analysis such as, C-V hysteresis, charge program/ erase efficiency and retention time are investing by HP 4285. The Gd2O3 nanocrystal memory is observed by high resolution transmission electron microscope (HRTEM), and Energy-dispersive X-ray spectroscopy analysis used for identifying the elemental composition. This study can be the candidate for the next generation for the memory application.
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