Tunable Flat-band Voltage of Dual-Sputtering HfGdO MOS Device with Interface Dipoles
碩士 === 長庚大學 === 電子工程學研究所 === 98 === In this thesis, we use reactive sputter system to dual-sputtering Hf and Gd target. Using various sputtering power ratio to modulate the doping concentration of HfGdO gate dielectric. To reduce of the fixed oxide charge utilizing post-deposition annealing. And the...
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| Format: | Others |
| Online Access: | http://ndltd.ncl.edu.tw/handle/44852772448246431809 |