Investigation of Ternary Oxide Materials LaAlO3 as Gate Dielectric by PLD
碩士 === 長庚大學 === 電子工程學系 === 98 === In this thesis, we have studied the fabricated of metal-insulator-metal oxide (MIM) capacitors structure. We deposited high dielectric constant LaAlO3 by pulsed laser deposition. Study electrical and physical characterization deposited with different oxygen partial...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35560593589012342936 |