The Research of Interdigitated InGaN Solar Cell by Using Superlattice Strain Reduce Layers.
碩士 === 長庚大學 === 電子工程學系 === 98 === GaN/InGaN solar cells have been discussed recently, because this material has two advantage, large band gap and tunable band gap. The band gap can be tuned from 0.7eV to 3.4eV. Therefore GaN/InGaN solar cells can be a high efficiency material for solar cells. In...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00194823826535089962 |