The Fabrication of High Power AlGaN/GaN HEMTs With The Flip-Chip Technology
碩士 === 長庚大學 === 電子工程學系 === 98 === AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have great potential in high frequency and high power application. But when AlGaN/GaN HEMTs operate at high power condition, the excess heat of the HEMT devices will to limit their output power. At...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89316303191836164741 |