Resistive Switching Behavior in Rare-Earth Oxide Films for Nonvolatile Memory Application
碩士 === 長庚大學 === 電子工程學系 === 98 === Resistance random access memory (RRAM) has the strengths of simple structure, low operation voltage, high speed, low power consumption, high endurance, long retention, non-destructive read, and low scale limit. It acquires a lot of attention, and many research group...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30930423590863429806 |