Fluorinated CMOS HfO2 n-/p-MOSFETS by Pre- and Post-CF4 Plasma Passivation for High Performance (HP) and Low Stand-by Power (LSTP) Application
碩士 === 長庚大學 === 電子工程學系 === 98 === In this study, Fermi-level pinning (FLP) free and relaxation of negative-bias temperature-instability (NBTI) for fluorinated zero interfacial layer (Z-IL) HfO2 CMOS were achieved by CF4 plasma treatment on Si substrate. 48% and 45% driving current enhancement were o...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/49564918928638807084 |