Co-diffusion of carbon and phosphorus in silicon during formation of ultra-shallow junctions
碩士 === 長庚大學 === 電子工程學系 === 98 === In this paper, we studied the carbon diffusion during ultra shallow junction formation with different conditions. The sample without preamorphization implantation (PAI) shows immobile carbon peak at the projected ion region. PAI and solid phase epitaxial regrowth...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04840012149442591682 |