Characteristic Analysis of AZO Transparent Electrode on N-Si Substrates Grown by MOCVD
碩士 === 中華技術學院 === 電子工程研究所碩士班 === 98 === In this study, we develop a high-quality AZO transparent electrode manufacturing procedure,using Zn [TMHD]2 and Al [TMHD]3 as precursors, oxygen as reacting gas and argon as carrier gas, todeposite AZO thin films on an N-Si（100）substrates. A home-made single-w...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/70184671866400383600 |