The investigation and Application of High-k Dielectric HfZrOx and Metal Gate Process CMOSFETs Technologies
碩士 === 中華大學 === 電機工程學系(所) === 98 === With the continued scaling of transistor dimensions, the thickness of gate oxide has to be reduced. When the channel length is scaled below 0.1μm and SiO2 gate oxide thickness below 1.5 nm, the high gate leakage current degrades the performance of transistor and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97235833013871050445 |