MOCVD growth of AlN thin film and characteristic analysis
碩士 === 中原大學 === 電子工程研究所 === 98 === Aluminum nitride (AlN) films were grown on Si(111) and c-plane sapphire (Al2O3) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using Trimethylaluminum (TMA) and ammonia (NH3) were used as Al and N sources. SiH4 as an n-type d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33591342536905244185 |