AlInGaP LED Stress Sensor and It’s Application on Package
碩士 === 大葉大學 === 電機工程學系 === 98 === Piezo-resistors act as a stress sensors were made by dry etching through AlGaInP/GaAs LED epi-wafer. Three meander shaped stress sensors along [110] and [ 10] were made on P layers. Their resistances were approximately 40KΩ、140KΩ and 250KΩ respectively. External for...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/03026262858869701924 |
id |
ndltd-TW-098DYU00442005 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-098DYU004420052016-04-27T04:11:51Z http://ndltd.ncl.edu.tw/handle/03026262858869701924 AlInGaP LED Stress Sensor and It’s Application on Package 以磷化鋁銦鎵發光二極體製成應力計及其在封裝上的應用 P.J.shen 沈伯仲 碩士 大葉大學 電機工程學系 98 Piezo-resistors act as a stress sensors were made by dry etching through AlGaInP/GaAs LED epi-wafer. Three meander shaped stress sensors along [110] and [ 10] were made on P layers. Their resistances were approximately 40KΩ、140KΩ and 250KΩ respectively. External forces were exerted on a sensor strip. Four-point bending method was used to calibrate the resistance changes under both tensile stress and compressive stress. It was found that the resistance of stress sensor along [110] has an increment of 0.76-1.54% under tensile stress. Larger the tensile stress higher the resistance change. By contrast, the resistance of those stress sensors along [110] has the decrement of -1.12%至-0.59% under compressive stress. Again, larger the compressive stress higher the resistance change. After making a detailed calibration, stress sensor was mounted into SMD packaging. The stress type and quantity inside the SMD packaging is successfully measured. 張國雄 2010 學位論文 ; thesis 50 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 大葉大學 === 電機工程學系 === 98 === Piezo-resistors act as a stress sensors were made by dry etching through AlGaInP/GaAs LED epi-wafer. Three meander shaped stress sensors along [110] and [ 10] were made on P layers. Their resistances were approximately 40KΩ、140KΩ and 250KΩ respectively. External forces were exerted on a sensor strip. Four-point bending method was used to calibrate the resistance changes under both tensile stress and compressive stress. It was found that the resistance of stress sensor along [110] has an increment of 0.76-1.54% under tensile stress. Larger the tensile stress higher the resistance change. By contrast, the resistance of those stress sensors along [110] has the decrement of -1.12%至-0.59% under compressive stress. Again, larger the compressive stress higher the resistance change. After making a detailed calibration, stress sensor was mounted into SMD packaging. The stress type and quantity inside the SMD packaging is successfully measured.
|
author2 |
張國雄 |
author_facet |
張國雄 P.J.shen 沈伯仲 |
author |
P.J.shen 沈伯仲 |
spellingShingle |
P.J.shen 沈伯仲 AlInGaP LED Stress Sensor and It’s Application on Package |
author_sort |
P.J.shen |
title |
AlInGaP LED Stress Sensor and It’s Application on Package |
title_short |
AlInGaP LED Stress Sensor and It’s Application on Package |
title_full |
AlInGaP LED Stress Sensor and It’s Application on Package |
title_fullStr |
AlInGaP LED Stress Sensor and It’s Application on Package |
title_full_unstemmed |
AlInGaP LED Stress Sensor and It’s Application on Package |
title_sort |
alingap led stress sensor and it’s application on package |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/03026262858869701924 |
work_keys_str_mv |
AT pjshen alingapledstresssensoranditsapplicationonpackage AT chénbózhòng alingapledstresssensoranditsapplicationonpackage AT pjshen yǐlínhuàlǚyīnjiāfāguāngèrjítǐzhìchéngyīnglìjìjíqízàifēngzhuāngshàngdeyīngyòng AT chénbózhòng yǐlínhuàlǚyīnjiāfāguāngèrjítǐzhìchéngyīnglìjìjíqízàifēngzhuāngshàngdeyīngyòng |
_version_ |
1718250204807823360 |