Improvement of Charge Trapping/ Detrapping Efficiency by Ion Bombardment for NAND Flash Memory
碩士 === 逢甲大學 === 產業研發碩士班 === 98 === According to ITRS roadmap, flash memory have some challenge about shrinkage of device size. However, flash memory must maintain the device reliability and improve the device characteristic. These are the main topics for the future research. We used ion bombardment...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90775190474831345951 |