Investigation on Double Recess of InAlAsSb/InGaAsSb Metamorphic High Electron Mobility Transistor with Symmetrically-Graded Channel
碩士 === 逢甲大學 === 電子工程所 === 98 === This work reports, high electron mobility transistors (HEMTs) using a In0.34Al0.66As0.85Sb0.15 Schottky contact layer and dilute-Sb symmetrically-graded InxGa1-xAs1-ySby channel , grown by molecular beam epitaxy (MBE) system. Introducing Sb can be further integrated...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62604101294490967695 |