Analysis of the DC and Internal Efficiency Characteristics of the β-FeSi2 DH-LED
碩士 === 義守大學 === 電子工程學系碩士班 === 98 === The light-emitting devices are all fabricated by using Ⅲ-Ⅴ compound materials at the present day. However, the lattice constants of Ⅲ-Ⅴcompound materials are different from Si material, therefore the light-emitting devices can not be integrated with Si chips. Rec...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/95646691805661693502 |