The contact characteristic of Ni or Al/n-GaSb Schottky diode
碩士 === 崑山科技大學 === 光電工程研究所 === 98 === The contact characteristic of metal (Al、Ni)/GaSb Schottky diode is discussed in this thesis. The diodes were annealed in various temperature up to 450℃ in rapid thermal annealing (RTA). We found that the Ni/n-GaSb Schottky diode shows best schottky characteristic...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22230363352110721561 |