Gallium and Aluminum Co-doped Zinc Oxide (GAZO) Films Prepared by in-line Sputter Tool
碩士 === 崑山科技大學 === 電機工程研究所 === 98 === substrate unheated temperature, 100 °C, 200 °C and 250 °C. In-line sputtering is a popular method to produce large area, high throughput thin films in today industry. Optimum electrical and optical properties were obtained from GAZO films with 250 °C substrate te...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40543260973395055275 |
| Summary: | 碩士 === 崑山科技大學 === 電機工程研究所 === 98 === substrate unheated temperature, 100 °C, 200 °C and 250 °C. In-line sputtering is a popular method to produce large area, high throughput thin films in today industry.
Optimum electrical and optical properties were obtained from GAZO films with 250 °C substrate temperature during sputtering: 91% average optical transmittance in 400~1100 nm region and 4.43×10-4Ω-cm electrical resistivity; better than 80% average optical transmittance and 8.17×10-4Ω-cm electrical resistivity corresponding to optimum GAZO films made by co-sputtering reported by others.
Whether the substrate moving condition: continuous moving or standstill with respect to target during sputtering can affect electrical and optical properties of in-line sputtered GAZO films or not was also studied. The electrical resistivity of GAZO films corresponding to continuous moving substrate is 7.84x10-4Ω-cm; which is almost one time lower than that corresponding to standstill substrate: 1.6X10-3Ω-cm. This could be related with better uniform heating on GAZO films corresponding to continuous moving substrate than those corresponding to standstill substrate.
This work can contribute to flat panel display, thin films solar cells, touch panel industries if GAZO films were considered as transparent electrode candidates.
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