| Summary: | 碩士 === 國立高雄應用科技大學 === 電子工程系 === 98 === In this research, the non c-axis (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputtering conditions ( Target-substrate distance, Sputtering time, RF power ) were investigated by X-Ray diffraction (XRD), Profile meter,Atomic Force Microscopy(AFM), C-V measurement. The best non c-axis (100) oriented AlN thin films were prepared with 350W RF power, 50% nitrogen concentration, 200℃substrate temperature, 9 mTorr chamber pressure, Sputtering time 2 hours and Target-substrate distance 9.5 cm in this research. Finally we measured the C-V properties of MIS capacitor bu using (100) AlN films as dielecrric.
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