Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering

碩士 === 國立高雄應用科技大學 === 電子工程系 === 98 === In this research, the non c-axis (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputtering conditions ( Target-substrate distance, Sputtering time, RF power ) were investigated b...

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Main Authors:	Han-Ruei Fang, 方漢瑞
Other Authors:	Maw-Shung Lee
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/88163993756597286910

id	ndltd-TW-098KUAS8393016
record_format	oai_dc
spelling	ndltd-TW-098KUAS83930162015-10-13T18:58:40Z http://ndltd.ncl.edu.tw/handle/88163993756597286910 Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering 反應性射頻磁控濺鍍法成長(100)取向氮化鋁薄膜MIS特性之研究 Han-Ruei Fang 方漢瑞碩士國立高雄應用科技大學電子工程系 98 In this research, the non c-axis (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputtering conditions ( Target-substrate distance, Sputtering time, RF power ) were investigated by X-Ray diffraction (XRD), Profile meter,Atomic Force Microscopy(AFM), C-V measurement. The best non c-axis (100) oriented AlN thin films were prepared with 350W RF power, 50% nitrogen concentration, 200℃substrate temperature, 9 mTorr chamber pressure, Sputtering time 2 hours and Target-substrate distance 9.5 cm in this research. Finally we measured the C-V properties of MIS capacitor bu using (100) AlN films as dielecrric. Maw-Shung Lee Sean Wu 李茂順吳信賢 2010 學位論文 ; thesis 102 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立高雄應用科技大學 === 電子工程系 === 98 === In this research, the non c-axis (100) oriented AlN thin films were deposited on p-type (100) silicon substrate by RF magnetron sputtering. The dependence between sputtering conditions ( Target-substrate distance, Sputtering time, RF power ) were investigated by X-Ray diffraction (XRD), Profile meter,Atomic Force Microscopy(AFM), C-V measurement. The best non c-axis (100) oriented AlN thin films were prepared with 350W RF power, 50% nitrogen concentration, 200℃substrate temperature, 9 mTorr chamber pressure, Sputtering time 2 hours and Target-substrate distance 9.5 cm in this research. Finally we measured the C-V properties of MIS capacitor bu using (100) AlN films as dielecrric.
author2	Maw-Shung Lee
author_facet	Maw-Shung Lee Han-Ruei Fang 方漢瑞
author	Han-Ruei Fang 方漢瑞
spellingShingle	Han-Ruei Fang 方漢瑞 Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering
author_sort	Han-Ruei Fang
title	Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering
title_short	Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering
title_full	Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering
title_fullStr	Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering
title_full_unstemmed	Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering
title_sort	study on mis properties of (100) oriented aln films by reactive rf magnetron sputtering
publishDate	2010
url	http://ndltd.ncl.edu.tw/handle/88163993756597286910
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Study on MIS Properties of (100) Oriented AlN Films by Reactive RF Magnetron Sputtering

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